| PART |
Description |
Maker |
| FX6ASH3 FX6ASH2 FX6UMH3 FX6VSH3 FX6SMH3 FX6KMH2 FX |
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-252AA
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-252AA
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-220AB
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-247VAR
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | SOT-186
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-220AB
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-247VAR
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | SOT-186
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 20A I(D) | TO-252AA 晶体管| MOSFET的| P通道| 100V的五（巴西）直| 20A条（丁）|52AA
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 3A I(D) | TO-220AB 晶体管| MOSFET的| P通道| 150伏五（巴西）直| 3A条（丁）| TO - 220AB现有
|
Cooper Bussmann, Inc.
|
| IRFL4310 IRFL4310TR |
HEXFET? Power MOSFET
1.6 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=1.6A)
100V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
IRF[International Rectifier]
|
| STN2NE10 |
N - CHANNEL 100V - 0.33 Ohm - 2A - SOT-223 STripFET POWER MOSFET
N - CHANNEL 100V - 0.33 ohm - 2A - SOT-223 STripFET POWER MOSFET
|
SGS Thomson Microelectronics
STMicroelectronics
|
| BSP296 |
Low Voltage MOSFETs - Small-Signal MOSFET, 100V, SOT-223, RDSon=0.8 Ohm, 1.0A, LL
|
Infineon
|
| WP-MKT4-173250-S WP-MKT4 WP-MKT4-173225-D WP-MKT4- |
MOSFET DUAL N-CHAN 20V SOT-323 窄带调频甚高频发射模
MOSFET N-CHAN DUAL 200MW SOT-363
MOSFET N-CHAN 50V 350MW SOT-23
MOSFET DUAL N-CHAN 50V SOT-26
FM Narrow Band VHF Transmitter Module
|
Electronic Theatre Controls, Inc.
Wireless Products
ETC[ETC]
List of Unclassifed Manufacturers
|
| BSS169 |
SIPMOS SMALL-SIGNAL-TRANSISTOR
Low Voltage MOSFETs - Depletion MOSFET, 100V, SOT-23, RDSon = 12Ohm, 0.09A, NL
|
Infineon Technologies A...
Infineon Technologies AG
|
| FDD3672 FDD3672NL |
N-Channel UltraFET Trench MOSFET 100V/ 44A/ 28m
N-Channel UltraFET Trench MOSFET 100V, 44A, 28mз
Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 44A, 0.028 Ohms @ VGS = 10V, TO-252/DPAK Package
N-Channel UltraFET Trench MOSFET 100V, 44A, 28mOhm
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRF5NJ540 |
Avalanche Energy Ratings
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.052ohm, Id=22A*)
SURFACE MOUNT (SMD-0.5)100V, N-CHANNEL
100V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package
|
IRF[International Rectifier]
|
| IRFS9140 |
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 13.2A I(D) | SOT-186VAR 晶体管| MOSFET的| P通道| 100V的五（巴西）直| 13.2AI（四）|的SOT - 186VAR
|
Abracon, Corp.
|
| IRLI530G IRLI530GPBF |
100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
HEXFET? Power MOSFET
HEXFET Power MOSFET ( VDSS=100V , RDS(on)=0.16惟 , ID=9.7A )
HEXFET Power MOSFET ( VDSS=100V , RDS(on)=0.16Ω , ID=9.7A )
|
International Rectifier
|
| BSP373 |
Low Voltage MOSFETs - Small-Signal MOSFET, 100V, SOT-223, RDSon=0.3 Ohm, 1.7A, NL
SIPMOS Small-Signal Transistor
|
INFINEON[Infineon Technologies AG]
|
